PART |
Description |
Maker |
FCA16N60N |
N-Channel SupreMOSMOSFET 600V, 16A, 199m
|
Fairchild Semiconductor
|
STD2NC50 STD2NC50-1 STD2NC50T4 |
N-CHANNEL 500V 3OHM 2.2A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 500V 3OHM 2.2A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh⑩II MOSFET N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMeshII MOSFET N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh?II MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRG4PC30K IRG4PC30KPBF |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
H16C60 H16C30 H16C40 H16C50 |
HIGH EFFICIENCY RECTIFIERS(16A,300-600V) 高效率整流二极管6A300 - 600V的) HIGH EFFICIENCY RECTIFIERS(16A/300-600V)
|
MOSPEC[Mospec Semiconductor]
|
STW16NA40 STW16NA40FI STH16NA40 STH16NA40FI W16NA4 |
N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(N沟道功率MOS晶体 N沟道400V -0.21Ω- 16A TO-247/ISOWATT218功率MOS晶体管(不适用马鞍山沟道功率晶体管 N - CHANNEL 400V - 0.21W - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS From old datasheet system N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
|
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
BCR16PM-12LC-15 |
600V ?16A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
IRFY9130CM |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A) POWER MOSFET P-CHANNEL(BVdss=-100V Rds(on)=0.3ohm Id=-11.2A)
|
IRF[International Rectifier]
|
TR-6010 |
SILICON CONTROLLED RECTIFIER,600V V(DRM),16A I(T),TO-208AA
|
st
|
RFD16N06LESM RFD16N06LESM9A |
Discrete Commercial N-Channel Power MOSFET, 60V, 16A, 0.047 Ohms @ VGS = 4.5V, TO-252/DPAK Package 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|